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dc.rights.licensehttp://creativecommons.org/licenses/by-nc-sa/3.0/ve/
dc.contributor.authorDelgado, Gerzones_VE
dc.contributor.authorVillarreal, Manueles_VE
dc.contributor.authorPirela B., María E.es_VE
dc.contributor.authorVelásquez Velásquez, Anaes_VE
dc.contributor.authorMora, Asiloé J.es_VE
dc.contributor.authorFernández, Braulio J.es_VE
dc.date2007-03-28es_VE
dc.date.accessioned2007-03-28T09:00:00Z
dc.date.available2007-03-28T09:00:00Z
dc.date.created2007-03-28es_VE
dc.date.issued2007-03-28T09:00:00Zes_VE
dc.identifier.otherT016300002064/0es_VE
dc.identifier.urihttp://www.saber.ula.ve/handle/123456789/16942
dc.description.abstractStructural refinement of the ternary chalcogenide compoundCu2GeTe3 by X-ray powder diffraction Delgado, Gerzon E.; Mora, Asiloé J.; Pirela, María, Velásquez-Velásquez, Ana, Villarreal, Manuel; Fernández, Braulio J. Abstract The Cu2GeTe3 compound crystallizes in the Imm2 (N° 44) space group, Z = 2, with a = 12.641(1) Å, b = 4.2115(2) Å, c = 5.9261(2) Å, V = 315.49(3) Å3. Its structure was refined from X-ray powder diffraction data using the Rietveld method. The refinement of 23 instrumental and structural variables led to Rp = 8.2%, Rwp = 11.6%, Rexp = 6.8%, RB = 11.2 % and S = 1.7, for 5501 step intensities and 253 independent reflections. This compound is isostructural with Cu2GeSe3, and consists of a three-dimensional arrangement of slightly distorted CuTe4 and GeTe4 tetrahedra connected by common corners..es_VE
dc.format.extent190361es_VE
dc.language.isoeses_VE
dc.publisherSABER ULAes_VE
dc.rightsinfo:eu-repo/semantics/openAccess
dc.titleStructural refinement of the ternary chalcogenide compound Cu2GeTe3 by X-ray powder diffractiones_VE
dc.typeinfo:eu-repo/semantics/article
dc.description.emailgerzon@ula.vees_VE
dc.description.emailmavu@ula.vees_VE
dc.description.emailmpireira@ula.vees_VE
dc.description.emailanita@ula.vees_VE
dc.description.emailasiloe@ula.vees_VE
dc.description.emailbraulio@ula.vees_VE
dc.description.tiponivelNivel monográficoes_VE
dc.subject.centroinvestigacionCentro de Estudios de Semiconductoreses_VE
dc.subject.facultadFacultad de Ciencias.es_VE
dc.subject.idiomaIngléses_VE
dc.subject.tipoArtículoses_VE


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